2N3792 View Datasheet(PDF) - Semelab - > TT Electronics plc

Part Name

Description

View to exact match

2N3792

PNP SILICON EPITAXIAL BASE POWER TANSISTORS

Semelab - > TT Electronics plc  

2N3792

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Collector - Emitter Sustaining

VCEO(sus)* Voltage

VCE(sat)*

Collector - Emitter Saturation

Voltage

VBE(on)*

IEBO

ICEX

Base Emitter Voltage

Emmiter Cut-off Current

Collector Cut-off Current

hFE*

DC Current Gain

ft

Transition Frequency

Test Conditions

IC = 200mA

IB = 0

IC = 5A

IC = 5A

IC = 10A

IC = 0

VBE = 1.5V

IC = 1A

IC = 3A

IC = 10A

IC = 0.5A

f =1.MHz

IB = 0.5V

VCC = 2V

VCC = 4V

VEB =7V

VCE = 80

Tc = 150°C

VCE = 2V

VCE = 2V

VCE = 4V

VCE = 10V

Min.

-80

-1

50

30

5

4

Typ.

Max. Unit

V

1.8

V

4

-5

mA

-1

mA

-5

150

120 —

MHz

* Pulsed duration = 300 ms, duty cycle = 1.5%

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

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