VNP49N04 View Datasheet(PDF) - STMicroelectronics
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VNP49N04 Datasheet PDF : 11 Pages
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VNP49N04
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (**)
Symb ol
P a ram et er
Test Cond ition s
Min. Typ . Max. Un it
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 25 A
Rgen = 10 W
200 300
ns
1300 1800 ns
800 1200 ns
300 450
ns
td(on) Turn-on Delay Time
VDD = 15 V
Id = 25 A
1.3
1.9
ms
tr
Rise Time
Vgen = 10 V
Rgen = 1000 W
3.8
5.2
ms
td(off) Turn-off Delay Time
(see figure 3)
12
14
ms
tf
Fall Time
6.1
8.5
ms
(di/ dt) on
t(s) Qi
Turn-on Current Slope
Total Input Charge
VDD = 15 V
Vin = 10 V
VDD = 15 V
ID = 25 A
Rgen = 10 W
ID = 25 A Vin = 10 V
25
A/ms
100
nC
uc SOURCE DRAIN DIODE
rod Symbol
P a ram et er
P VSD (*) Forward On Voltage
te trr (**)
ole Qrr (**)
Obs IRRM (**)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Cu r re nt
Test Cond ition s
ISD = 25 A Vin = 0
ISD = 25 A di/dt = 100 A/ms
VDD = 30 V Tj = 25 oC
(see test circuit, figure 5)
Min.
Typ .
250
910
7.5
M a x.
1.6
Unit
V
ns
nC
A
) - PROTECTION
t(s Symbol
uc Ilim
rod tdlim (**)
te P Tjsh (**)
ole Tjrs (**)
ObsIgf (**)
P a ram et er
Test Cond ition s
Drain Current Limit
Step Response
Current Limit
Vin = 10 V
Vin = 5 V
Vin = 10 V
Vin = 5 V
VDS = 13 V
VDS = 13 V
Overtemperature
Shutdown
Overtemperature Reset
Fault Sink Current
Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V
Min.
30
30
150
Typ .
49
49
35
90
M a x.
68
68
50
150
Unit
A
A
ms
ms
oC
135
oC
50
mA
20
mA
Eas (**) Single Pulse
starting Tj = 25 oC VDD = 20 V
4
J
Avalanche Energy
Vin = 10 V Rgen = 1 KW L = 6 mH
(*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
(**) Parameters guaranteed by design/characterization
3/11
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