VNP49N04 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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VNP49N04 Datasheet PDF : 11 Pages
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VNP49N04
ABSOLUTE MAXIMUM RATING
Symbol
P ar ame t er
Value
Unit
VDS Drain-source Voltage (Vin = 0)
Internally Clamped
V
Vin Input Voltage
18
V
ID
Drain Current
Internally Limited
A
IR Reverse DC Output Current
-50
A
Vesd Electrostatic Discharge (C= 100 pF , R=1.5 KW)
2000
V
Pto t Total Dissipat ion at Tc = 25 oC
125
W
Tj
Operating Junction T emperature
Internally Limited
oC
Tc Case Operating T emperature
) Tst g Storage Temperature
Internally Limited
oC
-55 to 150
oC
ct(s THERMAL DATA
du Rthj-case Thermal Resistance Junction-case
ro Rthj-amb Thermal Resistance Junction-ambient
Max
Max
1
62.5
oC/W
oC/W
te P ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
le OFF
so Symbol
b V CL AMP
- O VCLTH
t(s) VINCL
uc IDSS
Prod IISS
P a ram et er
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (Vin = 0)
Supply Current from
Input Pin
Test Cond ition s
ID = 200 mA Vin = 0
ID = 2 mA Vin = 0
Iin = -1 mA
VDS = 13 V Vin = 0
VDS = 25 V Vin = 0
VDS = 0 V Vin = 10 V
Min.
36
Typ .
42
35
-1
250
M a x.
48
-0.3
50
200
500
Unit
V
V
V
mA
mA
mA
lete ON (*)
so Symbol
P a ram et er
ObVIN(th) Input Threshold
Test Cond ition s
VDS = Vin ID +Iin = 1 mA
Min.
0.8
Typ .
M a x.
3
Unit
V
Voltage
RDS( on) St atic Drain-source On Vin = 10 V ID = 25 A
Re s is ta nc e
Vin = 5 V ID = 25 A
0.02
W
0.025 W
DYNAMIC
Symb ol
gfs (*)
Coss
P a ram et er
Forward
T r ans c on duc ta nc e
Output Capacitance
Test Cond ition s
VDS = 13 V ID = 25 A
VDS = 13 V f = 1 MHz Vin = 0
Min.
25
Typ .
30
M a x.
Unit
S
1100 1500 pF
2/11
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