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Description
TK12A55D View Datasheet(PDF) - Toshiba
Part Name
Description
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TK12A55D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
Toshiba
TK12A55D Datasheet PDF : 6 Pages
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TK12A55D
r
th
– t
w
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
0.001
10
μ
PDM
t
SINGLE PULSE
T
Duty
=
t/T
Rth
(ch-c)
=
2.78°C/W
100
μ
1m
10m
100m
1
10
Pulse width t
w
(s)
SAFE OPERATING AREA
100
ID max (pulse)
*
ID max (continuous)
1 ms
*
10
100
μ
s
*
1
DC operation
Tc
=
25°C
0.1
0.01
* Single pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
1
10
VDSS max
100
Drain-source voltage V
DS
(V)
1000
E
AS
– T
ch
500
400
300
200
100
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
−
15 V
Test circuit
RG
=
25
Ω
V
DD
=
90 V, L
=
3.8 mH
B
VDSS
I
AR
V
DD
V
DS
Wave form
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2011-04-26
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