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Part Name
Description
K12A55D View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K12A55D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
Toshiba
K12A55D Datasheet PDF : 6 Pages
1
2
3
4
5
6
10
Common source
Tc
=
25°C
Pulse Test
8
6
4
2
I
D
– V
DS
10,8
6.5
6.25
6
5.75
5.5
VGS
=
5V
0
0
2
4
6
8
10
Drain-source voltage VDS (V)
TK12A55D
I
D
– V
DS
20
10,8
7.25
Common source
Tc
=
25°C
7
Pulse Test
16
6.75
12
6.5
8
6
4
5.5
VGS
=
5 V
0
0
10
20
30
40
50
Drain-source voltage VDS (V)
20
Common source
VDS
=
20 V
Pulse Test
16
I
D
– V
GS
12
8
100
Tc
= −
55°C
4
25
0
0
2
4
6
8
10
Gate-source voltage VGS (V)
V
DS
– V
GS
10
Common source
Tc
=
25°C
Pulse Test
8
6
ID
=
12 A
4
6
2
3
0
0
4
8
12
16
20
Gate-source voltage VGS (V)
100
Common source
VDS
=
20 V
Pulse Test
|Y
fs
| – I
D
Tc
= −
55°C
10
25
100
1
10
Common source
Tc
=
25°C
Pulse Test
R
DS (ON)
– I
D
1
VGS
=
10 V, 15 V
0.1
0.1
1
10
100
Drain current ID (A)
0.1
0.1
1
10
100
Drain current ID (A)
3
2011-04-26
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