20N60C3 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
20N60C3 Datasheet PDF : 14 Pages
| |||
Final data
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
1.5
Ω
1.3
1.2
1.1
4V
1
4.5V
5V
0.9
5.5V
6V
0.8
6.5V
20V
0.7
0.6
0.5
0.4
0.3
0 5 10 15 20 25 30 A 40
ID
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
80
A
25°C
60
50
10 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 13.1 A, VGS = 10 V
SPP20N60C3
1.1
Ω
0.9
0.8
0.7
0.6
0.5
0.4
0.3
98%
0.2
typ
0.1
0
-60 -20 20
60 100
12 Typ. gate charge
VGS = f (QGate)
parameter: ID = 20.7 A pulsed
SPP20N60C3
16
V
°C
180
Tj
12
0,2 VDS max
10
0,8 VDS max
40
8
150°C
30
6
20
4
10
2
0
0 1 2 3 4 5 6 7V 9
VGS
Page 7
0
0
20 40 60 80 100 nC 140
QGate
2003-10-08
Share Link: 