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SF25JZ51(2001) View Datasheet(PDF) - Toshiba
Part Name
Description
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SF25JZ51
(Rev.:2001)
TOSHIBA THYRISTOR SILICON PLANAR TYPE
Toshiba
SF25JZ51 Datasheet PDF : 6 Pages
1
2
3
4
5
6
ELECTRICAL CHARACTERISTICS
(Ta = 25
°C
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Repetitive Peak Off
−
State Current and
Repetitive Peak Reverse Current
Peak On
−
State Voltage
Gate Trigger Voltage
Gate Trigger Current
Holding Current
Critical Rate of Rise of Off
−
State Voltage
Thermal Resistance
I
DRM
I
RRM
V
TM
V
GT
I
GT
I
H
dv / dt
R
th (j
−
c)
V
DRM
= V
RRM
= Rated
I
TM
= 80 A
V
D
= 6 V, R
L
= 10
Ω
V
D
= 6 V, I
TM
= 500 mA
V
DRM
= Rated, Tc = 125°C
Exponential Rise
Junction to Case
SF25GZ51,SF25JZ51
MIN. TYP. MAX. UNIT
―
―
20
µA
―
―
1.5
V
―
―
1.5
V
―
―
20
mA
―
―
100
mA
―
50
―
V / µs
―
―
1.3 °C / W
MARKING
NUMBER
*1
TYPE
SYMBOL
SF25GZ51
SF25JZ51
MARK
F25GZ51
F25JZ51
Example
*2
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-05-10
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