MG100Q2YS65H View Datasheet(PDF) - Toshiba
Part Name
Description
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MG100Q2YS65H Datasheet PDF : 6 Pages
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IC – VCE (sat)
200
20 V
15 V
12 V
150
18 V
10 V
100
50
0
0
PC = 690 W
VGE = 8 V
Common emitter
Tc = 25°C
2
4
6
8
10
Collector-emitter voltage VCE (V)
MG100Q2YS65H
IC – VCE (sat)
200
20 V
18 V
12 V
150
15 V
10 V
100
50
VGE = 8 V
Common emitter
0
Tc = 125°C
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
VCE – VGE
12
Common emitter
Tc = 25°C
10
8
6
IC = 200 A
4
100 A
2
50 A
0
0
4
8
12
16
20
Gate-emitter voltage VGE (V)
VCE – VGE
12
Common emitter
Tc = 125°C
10
8
6
IC = 200 A
4
100 A
2
50 A
0
0
4
8
12
16
20
Gate-emitter voltage VGE (V)
IC – VGE
200 Common emitter
VCE = 5 V
150
100
Tc = 125°C
25°C
-40°C
50
0
0
4
8
12
16
Gate-emitter voltage VGE (V)
IF – VF
200 Common cathode
VGE = 0
-40°C
150
100
50
125°C
Tc = 25°C
0
0
1
2
3
4
5
Forward voltage VF (V)
3
2002-10-04
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