MG150Q2YS40 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
MG150Q2YS40 Datasheet PDF : 6 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance
Symbol
IGES
ICES
VGE (off)
VCE (sat)
Cies
tr
ton
tf
toff
VF
trr
Rth (j-c)
Test Condition
VGE = ±20V, VCE = 0
VCE = 1200V, VGE = 0
IC = 150mA , VCE = 5V
IC = 150A, VGE = 15V
VCE = 10V, VGE = 0, f = 1MHz
IF = 150A, VGE = 0
IF = 150A, VGE = −10V
di / dt = 200A / µs
Transistor
Diode
MG150Q2YS40
Min Typ. Max Unit
―
―
±20
µA
―
―
2.0 mA
3.0
―
6.0
V
―
3.0
4.0
V
― 18000 ―
pF
―
0.3
0.6
―
0.4
0.8
µs
―
0.2
0.5
―
0.8
1.5
―
2.0
3.0
V
― 0.25 0.5
µs
―
― 0.11
°C / W
―
―
0.4
2
2001-08-16
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