IRG4PC50KPBF View Datasheet(PDF) - International Rectifier

Part Name

Description

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IRG4PC50KPBF

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

International Rectifier 

IRG4PC50KPbF

70

60

50

40

Square wave:

60% of rated

30

voltage

I

20

10

Ideal diodes

0

0.1

For both:

Duty cycle: 50%

TJ = 125°C

Tsink = 90°C

Gate drive as specified

Power Dissipation = 40W

1

10

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

Triangular wave:

Clamp voltage:

80% of rated

A

100

1000

1000

100

TJ = 25 °C

TJ = 150 °C

10

VGE = 15V

20μs PULSE WIDTH

1

1

10

VCE , Collector-to-Emitter Voltage (V)

100

TJ = 150 °C

10

TJ = 25 °C

VCC = 50V

5μs PULSE WIDTH

1

5

6

7

8

9

10 11 12

VGE, Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

3

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June 2, 2015

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