HN7G02FU View Datasheet(PDF) - Toshiba
Part Name
Description
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HN7G02FU Datasheet PDF : 6 Pages
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Q1 (Transistor) Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input resistor
Symbol
Test Condition
ICBO
IEBO
hFE
VCE (sat)
R1
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 mA
IC = 5 mA, IB = −0.25 mA
⎯
Q2 (MOS-FET) Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Symbol
Test Condition
IGSS
V (BR) DSS
IDSS
Vth
⎪Yfs⎪
RDS (ON)
VGS = 10 V, VDS = 0
ID = 100 μA, VGS = 0
VDS = 20 V, VGS = 0
VDS = 3 V, ID = 0.1 mA
VDS = 3 V, ID = 10 mA
ID = 10 mA VGS = 2.5 V
HN7G02FU
Min Typ. Max Unit
⎯
⎯ −100 nA
⎯
⎯ −100 nA
120
⎯
400
⎯
−0.1 −0.3
V
3.29 4.7 6.11 kΩ
Min Typ. Max Unit
⎯
⎯
1
μA
20
⎯
⎯
V
⎯
⎯
1
μA
0.5
⎯
1.5
V
20
⎯
⎯
mS
⎯
20
40
Ω
2
2007-11-01
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