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Part Name
Description
HN7G02FU(2003) View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
HN7G02FU
(Rev.:2003)
TOSHIBA Multi Chip Discrete Device
Toshiba
HN7G02FU Datasheet PDF : 6 Pages
1
2
3
4
5
6
100
Common source
VDS
=
3 V
50 Ta
=
25°C
ï
Y
fs
ï
– I
D
30
10
5
3
0.5 1
35
10
30 50 100
Drain current I
D
(mA)
HN7G02FU
100
50
30
10
5
3
1
05
03
0.1
C – V
DS
Common source
VGS
=
0 V
f
=
1 MHz
Ta
=
25°C
Ciss
Coss
Crss
0.3 0.5 1
35
10
20
Drain-source voltage V
DS
(V)
3000
Common source
VGS
=
2.5 V
1000
Ta
=
25°C
V
DS (ON)
– I
D
500
300
100
50
30
10
5
0.5 1
35
10
30 50 100
Drain current I
D
(mA)
t – I
D
1000
toff
tf
100
ton
tr
2.5 V
VN
0
10
m
s
10
0.3
1
3
ID
VOUT D.U.
<=
1%
VIN: tr, tf
<
5 ns
(Zout
=
50
W
)
VDD
=
3 V
Common source
Ta
=
25°C
10
30
100
Drain current I
D
(mA)
P
D
– Ta
200
150
100
50
0
0
20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5
2003-03-12
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