HLB121 View Datasheet(PDF) - Unisonic Technologies
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HLB121 Datasheet PDF : 2 Pages
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UTC HLB121
CHARACTERISTICS CURVE
NPN EPITAXIAL SILICON TRANSISTOR
DC Current Gain & Collector Current
100
10000 Saturation Voltage & Collector Current
0
hFE @ VCE = 10V
10
1
1
10000
10
100
Collector Current (mA)
On Voltage & Collector Current
1000
10000
100
0
VBE(sat) @ IC = 5IB
100
VCE(sat) @ IC = 5IB
10
1
10
100
1000
Collector Current (mA)
1000
CapacitanceReverse Biased Voltage
1000
Bton @ VCE = 10V
100
0
100 200 300 400 500 600
Collector Current (mA)
Switching Time & Collector Current
10
VCC = 100V, IC = 5IB1 = -5IB2
100
Cib
10
1
0.1
10000
Cob
1
10
100
Reverse Biased Voltage (V)
Safe Operating Area
Ton
1
TSTG
Tf
0.1
0
100 200 300 400 500 600
Collector Current (mA)
1000
100
10
0
PT=1ms
PT=100ms
PT=1s
50
100
150
200
250
Forward Biased Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
2
QW-R213-015,A
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