GL9575 View Datasheet(PDF) - Unspecified

Part Name

Description

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GL9575

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Unspecified 

ISSUED DATE :2005/02/18

REVISED DATE :

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Circuit

Fig 12. Gate Charge Waveform

Important Notice:

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GTM reserves the right to make changes to its products without notice.

GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.

GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.

TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785

China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China

TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165

GL9575

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