BSC0902NS View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
BSC0902NS Datasheet PDF : 12 Pages
| |||
OptiMOS™ Power-MOSFET
BSC0902NS
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4 Static characteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V(BR)DSS
VGS(th)
IDSS
Min.
30
1
-
Values
Typ.
Max.
-
-
-
2.2
0.1
1
-
10
100
Gate-source leakage current
IGSS
-
Drain-source on-state resistance RDS(on) -
-
Gate resistance
Transconductance
RG
-
gfs
55
10
100
2.8
3.5
2.2
2.6
0.9
-
110
-
Unit Note / Test Condition
V
VGS=0 V, ID=1.0 mA
VDS=VGS, ID=250 µA
µA
VDS=30 V, VGS=0 V,
Tj=25 °C
VDS=30 V, VGS=0 V,
Tj=125 °C
nA
VGS=20 V, VDS=0 V
mΩ VGS=4.5 V, ID=30 A,
VGS=10 V, ID=30 A,
Ω
S
|VDS|>2|ID|RDS(on)max,
ID=30 A
Table 5 Dynamic characteristics
Parameter
Symbol
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ.
1700
600
88
4.2
5.2
21
3.6
Max.
-
-
-
-
-
-
-
Unit
pF
Note /
Test Condition
VGS=0 V, VDS=15 V,
f=1 MHz
ns
VDD=15 V, VGS=10 V,
ID=30 A, RG= 1.6 Ω
Final Data Sheet
3
2.0, 2011-03-01
Share Link: 