BSC090N03LSG View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
BSC090N03LSG Datasheet PDF : 10 Pages
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OptiMOS™3 Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel; Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC090N03LS G
Product Summary
V DS
R DS(on),max
ID
30 V
9 mΩ
48 A
PG-TDSON-8
Type
BSC090N03LS G
Package
PG-TDSON-8
Marking
090N03LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Value
Unit
48
A
30
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
I D,pulse
I AS
E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=35 A, R GS=25 Ω
I D=48 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
39
25
13
192
40
10
mJ
6
kV/µs
±20
V
Rev. 1.6
page 1
2009-11-03
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