DGT409BCA6565 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

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DGT409BCA6565

Reverse Blocking Gate Turn-off Thyristor

Dynex Semiconductor 

SEMICONDUCTOR

CURVES

IT

DGT409BCA

QS

VR

IRR

15µs

Fig.3 Reverse recovery waveforms

2.0

4.0

1.8

IGT

3.6

1.6

3.2

1.4

2.8

1.2

2.4

1.0

2.0

0.8

1.4

VGT

0.6

1.2

0.4

0.8

0.2

0.4

0

-50 -25

0

0 25 50 75 100 125 150

Junction temperature, Tj - (° C)

Fig.4 Maximum gate trigger voltage/current vs junction

temperature

1000

900

800

700

Tj = 25° C

600

500

Tj = 115° C

400

300

200

100

0

01 2 3 4 5 6 78

Instantaneous on-state voltage, VT - (V)

Fig.5 Maximum on-state characteristics

5/11

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