2SK2311(2006) View Datasheet(PDF) - Toshiba

Part Name

Description

View to exact match

2SK2311
(Rev.:2006)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)

Toshiba 

2SK2311

RG = 25 Ω

VDD = 25 V, L = 339 μH

EAS

=

1

2

⋅L

⋅ I2

⋅ ⎜⎛

⎝

BVDSS

BVDSS − VDD

⎟⎞

⎠

5

2006-11-17

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