2SD2400 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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2SD2400

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=50μA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=50μA ;IC=0

VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.1A

VBEsat Base-emitter saturation voltage

IC=1A ;IB=0.1A

ICBO

Collector cut-off current

VCB=120V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=0.1A ; VCE=5V

fT

Transition frequency

IC=0.1A ; VCE=5V;f=30MHz

COB

Collector output capacitance

IE=0; VCB=10V; f=1MHz

‹ hFE Classifications

D

E

F

60-120 100-200 160-320

Product Specification

2SD2400

MIN TYP. MAX UNIT

120

V

120

V

5

V

2.0

V

1.5

V

1.0 μA

1.0 μA

60

320

80

MHz

20

pF

2

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