D1439 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

View to exact match

D1439

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1439

DESCRIPTION

·High Voltage

·High Switching Speed

·Built-in damper diode

·Wide Area of Safe Operation

APPLICATIONS

·Designed for use in horizontal deflection circuits of

colour TV receivers.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

1500

V

VCES Collector-Emitter Voltage

1500

V

VEBO Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

3

A

ICP

Collector Current-Peak

10

A

IBP

Base Current- Peak

Collector Power Dissipation

@TC=25℃

PC

Collector Power Dissipation

@Ta=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

3.5

A

50

W

2.5

150

℃

-65-150 ℃

isc Website：www.iscsemi.cn

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