2SB950A View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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2SB950A

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB950A

DESCRIPTION

·High DC Current Gain-

: hFE= 2000(Min.)@IC= -3A

·High Speed Switching

·Complement to Type 2SD1276A

APPLICATIONS

·Designed for power amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-4

A

ICM

Collector Current-Peak

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-8

A

2

W

40

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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