2N5955 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
2N5955 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5954 2N5955 2N5956
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Excellent safe operating area
·Complement to type 2N6372/6373/6374
APPLICATIONS
·Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
2N5954
VCBO
Collector-base voltage 2N5955
2N5956
2N5954
VCEO
Collector-emitter voltage 2N5955
2N5956
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-90
-70
-50
-80
-60
-40
-5
-6
-2
40
150
-65~200
UNIT
V
V
V
A
A
W
℃
℃
VALUE
4.3
UNIT
℃/W
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