XN0A312(2001) View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
View to exact match
XN0A312 Datasheet PDF : 5 Pages
| |||
Composite Transistors
XN0A312 (XN1A312)
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Transistors with built-in resistor, Tr1 collecter is connected to
Tr2 base.)
q Reduction of the mounting area and assembly cost by one half.
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
3
4
5
2
1
0.30+–00..0150
10˚
Unit: mm
0.16+–00..0160
s Basic Part Number of Element
q UNR1212 (UN1212) + UNR1112 (UN1112)
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage VCBO
50
V
Tr1 Collector to emitter voltage VCEO
50
V
Collector current
IC
100
mA
Collector to base voltage VCBO
–50
V
Tr2 Collector to emitter voltage VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
300
mW
Overall Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
1 : Collector (Tr1)
Base (Tr2)
2 : Collector (Tr2)
3 : Emitter (Tr2)
4 : Base (Tr1)
5 : Emitter (Tr1)
EIAJ : SC–74A
Mini5-G1 Package
Marking Symbol: 4P
Internal Connection
Tr1
5
1
4
3
2
Tr2
Note) The Part number in the Parenthesis shows conventional part number.
1
Share Link: 