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Part Name
Description
TK6A65D View Datasheet(PDF) - Toshiba
Part Name
Description
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TK6A65D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ)
Toshiba
TK6A65D Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
3
COMMON SOURCE
VGS
=
10 V
PULSE TEST
2.4
6
1.8
3
ID
=
1.5 A
1.2
0.6
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
TK6A65D
I
DR
– V
DS
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
1
10,15
5
3 1
VGS
=
0 V
0.1
0
−
0.3
−
0.6
−
0.9
−
1.2
−
1.5
DRAIN-SOURCE VOLTAGE V
DS
(V)
10000
1000
100
CAPACITANCE – V
DS
Ciss
Coss
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
5
4
3
www.DataSheet.co.kr
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
50
40
30
20
10
1
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
VDS
400
300
200
100
16
200
12
VDD
=
100 V
400
VGS
8
COMMON SOURCE
ID
=
6 A
Tc
=
25°C
PULSE TEST
4
0
0
0
6
12
18
24
30
TOTAL GATE CHARGE Q
g
(nC)
4
2009-04-09
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