CR02AM-8A View Datasheet(PDF) - MITSUBISHI ELECTRIC
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Description
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CR02AM-8A Datasheet PDF : 5 Pages
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GATE CHARACTERISTICS
102
7
5
3
2
101
VFGM = 6V
PGM = 0.1W
7
5
3
PG(AV) = 0.01W
2
100
VGT = 0.8V
7
5
IGT = 100µA
3
(Tj = 25°C)
2
10–1
7
5
VGD = 0.2V
IFGM = 0.1A
3
2
10–2
10–22 3 5 710–12 3 5 71002 3 5 71012 3 5 7102
GATE CURRENT (mA)
GATE CURRENT VS.
JUNCTION TEMPERATURE
200
TYPICAL EXAMPLE
180
IGT (25°C)
160
#1
140
#2
# 1 32µA
# 2 9µA
120
100
80
60
40
See V3
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
200
180
160
140
120
100
80
60
40
20
0
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (s)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
7
5
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
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0.1
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
120° 180°
90°
60°
θ = 30°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
0.1
0.2
0.3
0.4
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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