HZM5.6ZFA View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

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HZM5.6ZFA

Silicon Epitaxial Planar Zener Diode for Surge Absorb

Hitachi -> Renesas Electronics 

HZM5.6ZFA

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Value

Unit

Power dissipation

Pd *1

200

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-55 to +150

°C

Note 1. Four device total, See Fig.2.

Electrical Characteristics (Ta = 25°C) *1

Item

Symbol Min Typ Max Unit

Zener voltage

VZ

Reverse current

IR

Capacitance

C

5.31 —

——

— 8.0

5.92 V

0.5 µA

8.5 pF

Dynamic resistance r d

ESD-Capability *2 —

— — 80 Ω

8

— — kV

Notes 1. Per one device.

2. Failure criterion ; IR > 0.5µA at VR = 2.5V.

Test Condition

IZ = 5 mA, 40ms pulse

VR = 2.5V

VR = 0V, f = 1 MHz

IZ = 5 mA

C =150pF, R = 330 Ω, Both forward and

reverse direction 10 pulse

2

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