K253 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

View to exact match

K253

RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

NEC => Renesas Technology 

3SK253

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC

Drain to Source Breakdown Voltage

Drain Current

Gate1 to Source Cutoff Voltage

Gate2 to Source Cutoff Voltage

Gate1 Reverse Current

Gate2 Reverse Current

SYMBOL

BVDSX

IDSX

VG1S(off)

VG2S(off)

IG1SS

IG2SS

MIN.

18

0.5

–1.0

0

Forward Transfer Admittance

|yfs|

14

Input Capacitance

Ciss

1.5

Output Capacitance

Coss

0.5

Reverse Transfer Capacitance

Crss

Power Gain

Gps

15

Noise Figure

NF

TYP.

0

0.5

19

2.0

1.0

0.01

18

1.8

MAX.

7.0

+1.0

1.0

±20

±20

24

2.5

1.5

0.03

21

3.0

UNIT

V

mA

V

V

nA

nA

mS

pF

pF

pF

dB

dB

TEST CONDITIONS

VG1S = VG2S = –2 V, ID = 10 µA

VDS = 3.5 V, VG2S = 3 V, VG1S = 0.75 V

VDS = 3.5 V, VG2S = 3 V, ID = 10 µA

VDS = 3.5 V, VG1S = 3 V, ID = 10 µA

VDS = 0, VG2S = 0, VG1S = ±6 V

VDS = 0, VG1S = 0, VG2S = ±6 V

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA

f = 1 kHz

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA

f = 1 MHz

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA

f = 900 MHz

IDSX Classification

Rank

Marking

IDSX (mA)

U1G/UAG*

U1G

0.5 to 7.0

* Old specification / New specification

2

Share Link: