datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

NTE56004 View Datasheet(PDF) - NTE Electronics

Part Name
Description
View to exact match
NTE56004
NTE-Electronic
NTE Electronics NTE-Electronic
NTE56004 Datasheet PDF : 2 Pages
1 2
Electrical Characteristics (TC = 25°C, and either polarity of MT2 to MT1 Voltage, unless
otherwise noted)
Characteristics
Symbol Min Typ Max Unit
Peak Forward or Reverse Blocking Current
(Rated VDRM, or VRRM, Gate open) TJ=25°C
TJ=125°C
Peak On–State Voltage
(ITM = 21 A Peak; Pulse Width = 1 to 2ms,
Duty Cycle 2%)
IDRM,
IRRM
VTM
10
µA
2
mA
1.3
1.6 Volts
Gate Trigger Current (Continuous dc)
(VD = 12Vdc, RL = 100 Ohms)
MT2(+) G(+), MT2(+) G(–), MT2(–) G(–)
MT2(–), G(+)
IGT
mA
50
75
Gate Trigger Voltage (Continuous dc)
(VD = 12Vdc, RL = 100 Ohms)
MT2(+) G(+), MT2(+) G(–)
MT2(–) G(–)
MT2(–) G(+)
(VD = Rated VDRM, RL = 10k Ohms, TJ = 110°C)
MT2(+) G(+), MT2(–) G(–), MT2(+) G(–)
MT2(–) G(+)
VGT
Volts
0.9
2
1.1
2
1.4
2.5
0.2
0.2
Holding Current (Either Direction)
(VD = 12Vdc, IT = 200mA, Gate Open)
IH
Turn–On Time
tgt
(VD = Rated VDRM, ITM = 17A)
(IGT = 120mA, Rise Time = 0.1µs, Pulse Width = 2µs)
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 21 A, Commutating
di/dt = 8A/ms, Gate Unenergized, TC = 80°C)
dv/dt(c) –
6
40
mA
1.5
µs
5
V/µs
.147 (3.75)
Dia Max
.420 (10.67)
Max
MT2
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
MT1
.100 (2.54)
.250
(6.35)
Max
.500
(12.7)
Min
Gate
MT2

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]