MJE5850(2002) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

View to exact match

MJE5850
(Rev.:2002)

SWITCHMODE
Series PNP Silicon Power Transistors

ON Semiconductor 

MJE5850 MJE5851 MJE5852

VCEO(sus)

-10 V

1

20

0

2

PW Varied to Attain

IC = 100 mA

Table 1. Test Conditions for Dynamic Performance

RBSOA AND INDUCTIVE SWITCHING

0.0025 µF

+V

50 µF

+-

INPUT

+V

0 50 Ω

2W

0.2 µF

0.1 µF

500 Ω

500 Ω 1/2 W

1/2 W

0.1 µF

MJE15029

1N4934

500 Ω

1/2 W

0.2 µF

0.0033 µF

500 Ω

1/2 W

1

1Ω2W

2

MJE15028

0.1 µF

–V adjusted to obtain desired IB1

+V adjusted to obtain desired VBE(off)

-+

50 µF

-V

Lcoil = 80 mH, VCC = 10 V

Rcoil = 0.7 Ω

Lcoil = 180 µH

Rcoil = 0.05 Ω

VCC = 20 V

Vclamp = 250 V

RB adjusted to attain desired IB1

INDUCTIVE TEST CIRCUIT

TUT

1

INĆ

PUT

SEE ABOVE FOR

DETAILED CONDITIONS

1N4937

OR

EQUIVALENT

Vclamp

RS =

0.1 Ω

Rcoil

Lcoil

VCC

OUTPUT WAVEFORMS

IC

ICM

t1

VCE

VCEM

TIM

E

tf

Cltamped

tf

Vclamp

t

t2

t1 Adjusted to

Obtain IC

t1 ≈

Lcoil (ICM)

VCC

t2 ≈

Lcoil (ICM)

VClamp

Test Equipment

Scope — Tektronix

475 or Equivalent

RESISTIVE SWITCHING

TURN–ON TIME

1

2

IB1

IB1 adjusted to

obtain the forced

hFE desired

TURN–OFF TIME

Use inductive switching

driver as the input to

the resistive test circuit.

VCC = 250 V

RL = 62 Ω

Pulse Width = 10

µs

RESISTIVE TEST CIRCUIT

TUT

1

RL

2

VCC

1.0

tc 100°C

0.8

IB

VCE

10%

90% IB1 VCEM

tc

tfi

10% 2%

ICM ICM 0.6

tsv 100°C

IC

tsr

trv

tti

0.4

3.0

IC = 4 A

2.7

IC/IB = 4

TJ = 25°C

2.4

2.1

tsv 25°C

1.8

1.5

1.2

0.9

90%

ICM

Vclamp

0.2 tc 25°C

0.6

0.3

ICM

VCEM

0

0

TIME

0

1

2

34

5

6

78

VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 7. Inductive Switching Measurements

Figure 8. Inductive Switching Times

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