2N5320 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
View to exact match
2N5320 Datasheet PDF : 4 Pages
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2N5320/2N5321
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
17.5
175
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 80 V
VCB = 60 V
for 2N5320
for 2N5321
IEBO
Collector Cut-off
Current (IC = 0)
VEB = 5 V
VEB = 4 V
for 2N5320
for 2N5321
V(BR)CEV
Collector-Emitter
Breakdown Voltage
(VBE = 1.5V)
IC = 100 µA
for 2N5320
for 2N5321
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
for 2N5320
for 2N5321
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100 µA
for 2N5320
for 2N5321
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 500 mA
for 2N5320
for 2N5321
IB = 50 mA
VBE∗
Base-Emitter Voltage
IC = 500 mA
for 2N5320
for 2N5321
VCE = 4 V
hFE∗ DC Current Gain
for 2N5320
IC = 500 mA
IC = 1 A
for 2N5321
IC = 500 mA
VCE = 4 V
VCE = 2 V
VCE = 4 V
fT
Transition Frequency IC = 50 mA VCE = 4 V f = 10 MHz
ton
Turn-on Time
IC = 500 mA VCC = 30 V
IB1 = 50 mA
toff
Turn-off Time
IC = 500 mA VCC = 30 V
IB1 = -IB2 = 50 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1 %
Min.
100
75
75
50
6
5
30
10
40
50
Typ.
0.1
0.5
Max.
0.5
5
0.5
0.8
1.1
1.4
130
250
80
800
Unit
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
MHz
ns
ns
2/4
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