PMBD353 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

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PMBD353

Schottky barrier double diode

NXP Semiconductors. 

NXP Semiconductors

Schottky barrier double diode

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

IR

reverse current

Cd

diode capacitance

Note

1. Pulse test: tp = 300 μs; δ = 0.02.

CONDITIONS

see Fig.2

IF = 0.1 mA

IF = 1 mA

IF = 10 mA

VR = 3 V; note 1; see Fig.3

f = 1 MHz; VR = 0; see Fig.4

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to SOT23 standard mounting conditions.

CONDITIONS

Product data sheet

PMBD353

MAX.

UNIT

350

mV

450

mV

600

mV

0.25

μA

1

pF

VALUE

500

UNIT

K/W

2001 Oct 15

3

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