BD652 View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

View to exact match

BD652

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

BD644/646/648/650/652

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

-ICBO

-ICEO

-IEBO

-VCE(SAT)

-VBE(SAT)

Collector Cutoff Current

-IE=0,-VCB =-VCEOMAX

-IE=0,-VCB =1/2 -VCBOMAX,

TJ=150°C

Collector Cutoff Current

-IE=0, -VCE =1/2 -VCEOMAX

Emitter Cutoff Current

-VEB=5 V, -IC=0

-IC=4 A, -IB=16 mA

Collector-Emitter saturation

Voltage (*)

-IC=3 A, -IB=12 mA

-IC=5 A, -IB=50 mA

Base-Emitter Saturation

Voltage (*)

-IC=12 A, -IB=50 mA

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

- - 0.1 mA

- - 1 mA

- - 0.2 mA

- - 5.0 mA

- -2

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- -2

- -2 V

- -2

- -2

- - 2.5

- - 2.5

- - 2.5

- - 2.5

- - 2.5

-

-3

V

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