GP2400ESM12 View Datasheet(PDF) - Dynex Semiconductor
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Description
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GP2400ESM12 Datasheet PDF : 12 Pages
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GP2400ESM12
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
VCES
VGES
I
C
IC(PK)
Pmax
Visol
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. power dissipation
Isolation voltage
Test Conditions
V = 0V
GE
-
DC, Tcase = 75˚C, Tj = 125˚C
1ms, Tcase = 75˚C, Tj = 125˚C
T = 25˚C (Transistor), T = 150˚C
case
j
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1200 V
±20
V
2400 A
4800 A
20.8 kW
2500 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Rth(j-c)
Rth(j-c)
R
th(c-h)
Thermal resistance - transistor
DC junction to case
Thermal resistance - diode
DC junction to case
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
Tj
Junction temperature
Transistor
Diode
Tstg
Storage temperature range
-
Screw torque
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
-
6 ˚C/kW
-
13.3 ˚C/kW
-
6 ˚C/kW
-
150 ˚C
-
125 ˚C
–40 125 ˚C
-
5
Nm
-
2
Nm
-
10 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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