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Description
GP800DDS12 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
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GP800DDS12
Powerline N-Channel Dual Switch IGBT Module
Dynex Semiconductor
GP800DDS12 Datasheet PDF : 11 Pages
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SWITCHING DEFINITIONS
t
4
+ 5
µ
s
∫
E
on
= V
ce
.I
c
dt
t
1
t
d(on)
= t
2
- t
1
t
r
= t
3
- t
2
+15V
10%
0V
-15V
90%
10%
t
1
t
2
t
3
t
4
Fig.3 Definition of turn-on switching times
GP800DDS12
V
ge
I
C
V
ce
+15V
90%
0V
-15V
V
ge
t
7
+ 5
µ
s
∫
E
off
= V
ce
.I
c
dt
t
5
90%
t
d(off)
= t
6
- t
5
10%
I
C
t
f
= t
7
- t
6
V
ce
t
5
t
6
t
7
Fig.4 Definition of turn-off switching times
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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