STB11NM60N-1(2008) Datasheet PDF - STMicroelectronics
Part Name
Description
MFG CO.
STB11NM60N-1
STMicroelectronics
Other PDF
PDF
STB11NM60N-1 Datasheet PDF :
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
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Part Name
Description
PDF
MFG CO.
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N-channel 600 V, 1.76 â¦, 4 A SuperMESH⢠Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP
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N-channel 600 V, 1.76 â¦, 4 A SuperMESH⢠Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP
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N-channel 650 V - 0.43 ⦠- 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh⢠Power MOSFET ( Rev : 2008_02 )
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N-channel 500V - 0.47⦠- 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⢠Power MOSFET
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N-channel 600V - 0.85⦠- 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⢠Power MOSFET ( Rev : 2007 )
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