STB11NM60N-1(2007) Datasheet PDF - STMicroelectronics
Part Name
Description
MFG CO.
STB11NM60N-1
STMicroelectronics
Other PDF
PDF
STB11NM60N-1 Datasheet PDF :
Description
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
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Part Name
Description
PDF
MFG CO.
N-channel 600V - 0.270⦠- 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⢠Power MOSFET
STMicroelectronics
N-CHANNEL 600V 0.140â¦-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh⢠MOSFET ( Rev : 2005 )
STMicroelectronics
N-CHANNEL 500V - 0.15⦠- 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh⢠MOSFET ( Rev : 2005 )
STMicroelectronics
N-channel 500V - 0.15⦠- 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh⢠Power MOSFET
STMicroelectronics
N-channel 650V - 0.25⦠- 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⢠Power MOSFET
STMicroelectronics
N-channel 650V - 0.16⦠- 19A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⢠Power MOSFET
STMicroelectronics
N-channel 600V - 0.85⦠- 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⢠Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-CHANNEL 600V - 0.19 ⦠- 17 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh⢠MOSFET ( Rev : 2005 )
STMicroelectronics
N-channel 600V - 0.140⦠- 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⢠Power MOSFET ( Rev : 2007 )
STMicroelectronics
, N-channel 600V - 0.37⦠- 10A - FDmesh⢠II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK ( Rev : 2008 )
STMicroelectronics
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