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PBSS5330PA Datasheet PDF - Nexperia B.V. All rights reserved

Part Name
Description
MFG CO.
PBSS5330PA
NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA
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PBSS5330PA Datasheet PDF : PBSS5330PA pdf     
PBSS5330PA image

General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

NPN complement: PBSS4330PA.

Features and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
• Exposed heat sink for excellent thermal and electrical conductivity
• Leadless small SMD plastic package with medium power capability

Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)

 

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