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CEP07N65A Datasheet PDF - ETC

Part Name
Description
MFG CO.
Other PDF
  no available.
PDF
CEP07N65A Datasheet PDF : CEP07N65A pdf     
CEP07N65A image

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=650V,ID=7A,RDS(ON)<1.25Ω @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

Page Link's: 1  2  3  4 
 

Part Name
Description
PDF
MFG CO.
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified

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