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BLP8G21S-160PV Datasheet PDF - NXP Semiconductors.

Part Name
Description
MFG CO.
BLP8G21S-160PV
NXP
NXP Semiconductors. NXP
Other PDF
  no available.
PDF
BLP8G21S-160PV Datasheet PDF : BLP8G21S-160PV pdf     
BLP8G21S-160PV image

General description
160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.

Features and benefits
■ Designed for broadband operation (1880 MHz to 2025 MHz)
■ Decoupling leads to enable improved video bandwidth
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Internally matched for ease of use
■ High power gain
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ RF power amplifiers for base station and multi-carrier applications in the 1880 MHz to
   2025 MHz frequency range

 

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