The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively.
The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions.
Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable.
• Currentless RF switch.
• Various RF switching applications such as:
- Passive loop through for VCR tuner
- Transceiver switching.