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AP9965GEM Datasheet PDF - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part Name
Description
MFG CO.
AP9965GEM
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER
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AP9965GEM Datasheet PDF : AP9965GEM pdf     
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Description:
This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=40V,ID=7A,RDS(ON)<32mΩ @VGS=4.5V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

 

Part Name
Description
PDF
MFG CO.
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
Unspecified
Dual N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Dual N-Channel MOSFET uses advanced trench technology
Unspecified

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