2SC5344 View Datasheet(PDF) - Rectron Semiconductor
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Description
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2SC5344 Datasheet PDF : 2 Pages
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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2SC5344
FEATURES
* Power dissipation
PCM :
0.2 W (Tamb=25OC)
* Collector current
ICM :
0.8 A
* Collector-base voltage
V(BR)CBO : 35 V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC= 100mA, IE=0)
V(BR)CBO
Collector-emitter breakdown voltage (IC= 10mA, IB=0)
V(BR)CEO
Emitter-base breakdown voltage(IE=10mA, Ic=0)
V(BR)EBO
Collector cut-off current (VCB= 35V, IE=0)
ICBO
Emitter cut-off current (VEB= 5V, IC=0)
DC current gain (VCE= 1V, IC= 100mA)
Collector-emitter saturation voltage (IC= 500mA, IB= 50mA)
IEBO
hFE(1)
VCE(sat)
Transition frequency (VCE= 5V, IC= 10mA)
fT
Collector output capacitance (VCB= 10V, IE=0, f= 1MHZ)
Cob
CLASSIFICATION OF hFE(1)
RANK
Range
Marking
SOT-23
COLLECTOR
3
BASE 1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
35
30
5
-
-
100
-
-
-
Q
100-200
FAO
TYP
MAX
UNITS
-
-
V
-
-
V
-
-
V
-
0.1
mA
-
0.1
mA
-
320
-
-
0.5
V
120
-
MHz
13
-
pF
Y
160-320
FAY
2006-3
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