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Part Name
Description
MBF10N View Datasheet(PDF) - Galaxy Semi-Conductor
Part Name
Description
View to exact match
MBF10N
Silicon Bridge Rectifiers
Galaxy Semi-Conductor
MBF10N Datasheet PDF : 4 Pages
1
2
3
4
Silicon Bridge Rectifiers
Production specification
MBF10N
Electrical Characteristics
(@T
A
= 25°C unless otherwise specified)
Parameter
Symbol
Test conditions
Typ.
Max.
Maximum instantaneous
forward voltage
V
F
I
F
=1.0A Per Diode
--
1.15
Rated V
R
,
@T
A
=25°C
--
5
Maximum Reverse current
I
R
Per Diode
@T
A
=125°C
--
200
Units
V
μA
MBF722AA
Rev.B
www.gmesemi.com
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