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Part Name
Description
TJ20A10M3 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
TJ20A10M3
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI)
Toshiba
TJ20A10M3 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
−
Tc
200
Common source
Pulse Test
160
120
80
VGS
= −
10 V
40
ID
= −
20 A
−
10
−
5
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
TJ20A10M3
−
100
Common source
Tc
=
25°C
Pulse Test
I
DR
−
V
DS
−
10
−
10
−
5
−
3
−
1 VGS
= −
0.1 V
−
1
0
−
0.4
−
0.8
−
1.2
−
1.6
−
2.0
Drain-source voltage VDS (V)
10000
1000
100
Capacitance – V
DS
Ciss
Coss
Crss
10
Common source
VGS
=
0 V
f =1MHz
Tc
=
25°C
1
−
0.1
−
1
−
10
Drain-source voltage VDS (V)
−
100
V
th
−
Tc
−
3.5
−
3.0
−
2.5
−
2.0
−
1.5
−
1.0
Common source
−
0.5
VDS
= −
10 V
ID
= −
1mA
Pulse Test
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
−
Tc
50
40
30
20
10
0
0
40
80
120
160
Case temperature Tc (°C)
−
100
VDS
−
80
−
60
−
40
−
20
Dynamic input / output
characteristics
-20
-16
−
40
VDD
= −
20 V
-12
−
80
VGS
-8
Common source
ID
= −
20 A
Tc
=
25°C
Pulse Test
-4
0
0
0
40
80
120
160
200
Total gate charge Qg (nC)
4
2018-06-01
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