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Part Name
Description
BB101M View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
View to exact match
BB101M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
BB101M Datasheet PDF : 11 Pages
1
2
3
4
5
6
7
8
9
10
Forward Transfer Admittance
vs. Gate1 Voltage
25
V
DS
= 5 V
R
G
= 390 k
Ω
20 f = 1 kHz
4V
3V
15
2V
10
5
V
G2S
= 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
BB101M
Power Gain vs. Gate Resistance
30
25
20
15
10
5
0
50
V
DS
= 5 V
V
G1
= 5 V
V
G2S
= 4 V
f = 900 MHz
100 200 500 1000 2000
Gate Resistance R
G
(k
Ω
)
5000
Noise Figure vs. Gate Resistance
4
3
2
1
V
DS
= 5 V
V
G1
= 5 V
V
G2S
= 4 V
f = 900 MHz
0
50 100 200
500 1000 2000
Gate Resistance R
G
(k
Ω
)
5000
Power Gain vs. Drain Current
30
25
20
15
10 V
DS
= 5 V
V
G1
= 5 V
5
V
G2S
= 4 V
R
G
= variable
f = 900 MHz
0
5 10 15 20 25 30
Drain Current I
D
(mA)
7
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