BL Galaxy Electrical
Production specification
Dual surface mount low leakage diode
BAV199
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Reverse breakdown voltage
V(BR) IR= 100μA
85
V
Reverse voltage leakage current
Forward voltage
IR
VR=75V
VR=75V Tj=150℃
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
5.0
nA
80
nA
900
1000 mV
1100
1250
Junction capacitance
Cj
VR=0V f=1MHz
2.0
pF
Reverse recovery time
trr
IF=IR=10mA Irr=0.1*IR
RL=100Ω
3.0
μS
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSDC039
Rev.A
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