Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name
Description
015N04N View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
015N04N
OptiMOS™3 Power-Transistor
Infineon Technologies
015N04N Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
13 Avalanche characteristics
I
AS
=f(
t
AV
);
R
GS
=25
Ω
parameter:
T
j(start)
1000
100
10
100 °C
25 °C
150 °C
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=100 A pulsed
parameter:
V
DD
12
10
8
IPP015N04N G
IPB015N04N G
20 V
8V
32 V
6
4
2
1
0
10
-1
10
0
10
1
10
2
10
3
0
50
100
150
200
t
AV
[µs]
Q
gate
[nC]
15 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
16 Gate charge waveforms
45
V
GS
Q
g
40
35
30
V
g s(th)
25
Q
g(th)
20
-60
-20
20
60 100 140 180
T
j
[°C]
Q
gs
Rev. 2.2
page 7
Q
sw
Q
gd
Q
gate
2009-11-16
Share Link:
datasheetbank.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]