IRF7809AV View Datasheet(PDF) - International Rectifier

Part Name

Description

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IRF7809AV

HEXFET Power MOSFET. VDS = 30V, RDS(on) = 7.0mΩ

International Rectifier 

IRF7809AV

1000

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

100

1000

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

100

10

0.1

2.5V

20µs PULSE WIDTH

TJ = 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

2.5V

10

0.1

20µs PULSE WIDTH

TJ = 150 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

TJ = 150° C

10

2.4

TJ = 25° C

V DS = 15V

20µs PULSE WIDTH

2.6

2.8

3.0

3.2

3.4

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0 ID = 15A

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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