TIP150 View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

View to exact match

TIP150

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

TIP150

SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220

enveloppe.

High voltage, high forward and reverse energy designed for industrial and consumer

applications.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

VCBO

VCEO

VEBO

IC

ICM

IB

PT

tJ

ts

tL

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Peak Current (1)

Base Current

Power Dissipation at Case

Temperature (2)

Power Dissipation at free Air

@ Tmb < 25°

Temperature (3)

Junction Temperature

Storage Temperature range

Lead Temperature 3.2 mm from case for 10 seconde

300

300

8

7

10

1.5

80

2

-65 to +150

-65 to +150

260

1. This value applies for tp <5ms, duty cycle <10%.

2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJC

RthJA

From Junction to Case Thermal Resistance

From Junction to Free-Air Thermal Resistance

Value

2.5

62.5

Unit

V

V

V

A

A

A

Watts

°C

Unit

°C/W

15/10/2012

COMSET SEMICONDUCTORS

1/3

09/11/2012

Share Link: