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P4C164L-100SI View Datasheet(PDF) - Semiconductor Corporation
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Description
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P4C164L-100SI
LOW POWER 8K x 8 STATIC CMOS RAM
Semiconductor Corporation
P4C164L-100SI Datasheet PDF : 11 Pages
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P4C164L
DATA RETENTION CHARACTERISTICS
Symbol
Parameter
Test Condition
Min
V
DR
I
CCDR
V
CC
for Data Retention
Data Retention Current
t
CDR
Chip Deselect to
Data Retention Time
t
R†
Operation Recovery Time
*
T
A
= +25°C
§
t
RC
= Read Cycle Time
†
This parameter is guaranteed but not tested.
2.0
CE
1
≥
V
CC
–
0.2V
or
CE
2
≤
0.2V, V
IN
≥
V
CC
– 0.2V
0
or V
IN
≤
0.2V
t
RC§
Typ.*
V
CC
=
2.0V 3.0V
1
1
Max
V
CC
=
Unit
2.0V 3.0V
V
3
3
µA
ns
ns
DATA RETENTION WAVEFORM
Document #
SRAM116
REV B
Page 7 of 11
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